BDT82 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDT82
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO220
BDT82 Transistor Equivalent Substitute - Cross-Reference Search
BDT82 Datasheet (PDF)
bdt82 bdt84 bdt86 bdt88.pdf
isc Silicon PNP Power Transistors BDT82/84/86/88DESCRIPTIONDC Current Gain -h = 40(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT82; -80V(Min)- BDT84;CEO(SUS)-100V(Min)- BDT86; -120V(Min)- BDT88Complement to Type BDT81/83/85/87Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for us
bdt81-bdt82-bdt83-bdt84-bdt85-bdt86-bdt87-bdt88.pdf
PNP BDT82 BDT84 BDT86 BDT88NPN BDT81 BDT83 BDT85 BDT87SILICON POWER TRANSISTORSILICON POWER TRANSISTORThe BDT82 BDT84 BDT86 BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope.They are intended for use in audio output stages and general amplifier and switching appications.NPN complements are BDT81 BDT83 BDT85 BDT87.
bdt82f bdt84f bdt86f bdt88f.pdf
isc Silicon PNP Power Transistors BDT82F/84F/86F/88FDESCRIPTIONDC Current Gain -h = 40(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT82F; -80V(Min)- BDT84F;CEO(SUS)-100V(Min)- BDT86F; -120V(Min)- BDT88FComplement to Type BDT81F/83F/85F/87FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDes
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
