BDT86 Datasheet. Specs and Replacement
Type Designator: BDT86
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO220
BDT86 Substitution
- BJT ⓘ Cross-Reference Search
BDT86 datasheet
isc Silicon PNP Power Transistors BDT82/84/86/88 DESCRIPTION DC Current Gain -h = 40(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT82; -80V(Min)- BDT84; CEO(SUS) -100V(Min)- BDT86; -120V(Min)- BDT88 Complement to Type BDT81/83/85/87 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for us... See More ⇒
bdt81-bdt82-bdt83-bdt84-bdt85-bdt86-bdt87-bdt88.pdf 
PNP BDT82 BDT84 BDT86 BDT88 NPN BDT81 BDT83 BDT85 BDT87 SILICON POWER TRANSISTOR SILICON POWER TRANSISTOR The BDT82 BDT84 BDT86 BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 BDT83 BDT85 BDT87. ... See More ⇒
bdt82f bdt84f bdt86f bdt88f.pdf
isc Silicon PNP Power Transistors BDT82F/84F/86F/88F DESCRIPTION DC Current Gain -h = 40(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT82F; -80V(Min)- BDT84F; CEO(SUS) -100V(Min)- BDT86F; -120V(Min)- BDT88F Complement to Type BDT81F/83F/85F/87F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Des... See More ⇒
Detailed specifications: BDT82, BDT82F, BDT83, BDT83F, BDT84, BDT84F, BDT85, BDT85F, BC337, BDT86F, BDT87, BDT87F, BDT88, BDT88F, BDT91, BDT91F, BDT92
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