BDT88 Datasheet. Specs and Replacement
The BDT88 is a high-power NPN bipolar junction transistor designed for switching and linear applications. It features a robust silicon epitaxial construction, allowing reliable operation at high currents and voltages. Typical uses include power supplies, motor drivers, audio amplifiers. The device offers good gain stability, low saturation voltage, efficient heat dissipation when mounted with proper cooling. Its rugged design makes it suitable for industrial environments where durability and consistent performance are essential.
Type Designator: BDT88
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO220
BDT88 Substitution
- BJT ⓘ Cross-Reference Search
BDT88 datasheet
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDT88 DESCRIPTION With TO-220C package Complement to type BDT87 APPLICATIONS Intented for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VAL... See More ⇒
isc Silicon PNP Power Transistors BDT82/84/86/88 DESCRIPTION DC Current Gain -h = 40(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT82; -80V(Min)- BDT84; CEO(SUS) -100V(Min)- BDT86; -120V(Min)- BDT88 Complement to Type BDT81/83/85/87 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for us... See More ⇒
bdt81-bdt82-bdt83-bdt84-bdt85-bdt86-bdt87-bdt88.pdf 
PNP BDT82 BDT84 BDT86 BDT88 NPN BDT81 BDT83 BDT85 BDT87 SILICON POWER TRANSISTOR SILICON POWER TRANSISTOR The BDT82 BDT84 BDT86 BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 BDT83 BDT85 BDT87. ... See More ⇒
bdt82f bdt84f bdt86f bdt88f.pdf
isc Silicon PNP Power Transistors BDT82F/84F/86F/88F DESCRIPTION DC Current Gain -h = 40(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT82F; -80V(Min)- BDT84F; CEO(SUS) -100V(Min)- BDT86F; -120V(Min)- BDT88F Complement to Type BDT81F/83F/85F/87F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Des... See More ⇒
Detailed specifications: BDT84, BDT84F, BDT85, BDT85F, BDT86, BDT86F, BDT87, BDT87F, A1015, BDT88F, BDT91, BDT91F, BDT92, BDT92F, BDT93, BDT93F, BDT94
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