BDT96 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDT96
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO220
BDT96 Transistor Equivalent Substitute - Cross-Reference Search
BDT96 Datasheet (PDF)
bdt92 bdt94 bdt96.pdf
isc Silicon PNP Power Transistor BDT92/94/96DESCRIPTIONDC Current Gain- h = 20~200@ I = -4AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT92; -80V(Min)- BDT94;CEO(SUS)-100V(Min)- BDT96Complement to Type BDT91/93/95Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output stages an
bdt92f bdt94f bdt96f.pdf
isc Silicon PNP Power Transistor BDT92F/94F/96FDESCRIPTIONDC Current Gain- h = 20~200@ I = -4AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT92F; -80V(Min)- BDT94F;CEO(SUS)-100V(Min)- BDT96FComplement to Type BDT91F/93F/95FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
