BDV64A Specs and Replacement
Type Designator: BDV64A
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 400 pF
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO218
BDV64A Substitution
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BDV64A datasheet
bdv64 bdv64a bdv64b bdv64c.pdf 
isc Silicon PNP Darlington Power Transistor BDV64/A/B/C DESCRIPTION Collector Current -I = -12A C Collector-Emitter Saturation Voltage- V = -2.0V(Max.)@ I = -5A CE(sat) C Complement to Type BDV65/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applic... See More ⇒
Order this document MOTOROLA by BDV65B/D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP Complementary Silicon Plastic BDV64B Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applica- tions. DARLINGTONS High DC Current Gain 10 AMPERES HFE = 1000 (min.) @ 5 Adc COMPLEMENTARY Monolithi... See More ⇒
BDV65B (NPN), BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. http //onsemi.com Features 10 AMPERE DARLINGTON High DC Current Gain - HFE = 1000 (min) @ 5 Adc COMPLEMENTARY SILICON Monolithic Construction with Built-in Base Emitter Shunt Resistors POWER TRANSISTORS These... See More ⇒
Detailed specifications: BDV38, BDV45, BDV46, BDV47, BDV48, BDV49, BDV50, BDV64, 2SC2625, BDV64B, BDV64C, BDV65, BDV65A, BDV65B, BDV65C, BDV66, BDV66A
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