BDV65A Datasheet. Specs and Replacement
Type Designator: BDV65A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO218
BDV65A Substitution
- BJT ⓘ Cross-Reference Search
BDV65A datasheet
bdv65 bdv65a bdv65b bdv65c.pdf 
isc Silicon NPN Darlington Power Transistor BDV65/A/B/C DESCRIPTION Collector Current -I = 12A C Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 5A CE(sat) C Complement to Type BDV64/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applicati... See More ⇒
Order this document MOTOROLA by BDV65B/D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP Complementary Silicon Plastic BDV64B Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applica- tions. DARLINGTONS High DC Current Gain 10 AMPERES HFE = 1000 (min.) @ 5 Adc COMPLEMENTARY Monolithi... See More ⇒
BDV65B (NPN), BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. http //onsemi.com Features 10 AMPERE DARLINGTON High DC Current Gain - HFE = 1000 (min) @ 5 Adc COMPLEMENTARY SILICON Monolithic Construction with Built-in Base Emitter Shunt Resistors POWER TRANSISTORS These... See More ⇒
Detailed specifications: BDV48, BDV49, BDV50, BDV64, BDV64A, BDV64B, BDV64C, BDV65, TIP42, BDV65B, BDV65C, BDV66, BDV66A, BDV66B, BDV66C, BDV66D, BDV67
Keywords - BDV65A pdf specs
BDV65A cross reference
BDV65A equivalent finder
BDV65A pdf lookup
BDV65A substitution
BDV65A replacement
