BDV65A Datasheet, Equivalent, Cross Reference Search
Type Designator: BDV65A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO218
BDV65A Transistor Equivalent Substitute - Cross-Reference Search
BDV65A Datasheet (PDF)
bdv65 bdv65a bdv65b bdv65c.pdf
isc Silicon NPN Darlington Power Transistor BDV65/A/B/CDESCRIPTIONCollector Current -I = 12ACCollector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 5ACE(sat) CComplement to Type BDV64/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicati
bdv64b bdv65b.pdf
Order this documentMOTOROLAby BDV65B/DSEMICONDUCTOR TECHNICAL DATANPNBDV65BPNPComplementary Silicon PlasticBDV64BPower Darlingtons. . . for use as output devices in complementary general purpose amplifier applica-tions.DARLINGTONS High DC Current Gain10 AMPERESHFE = 1000 (min.) @ 5 AdcCOMPLEMENTARY Monolithi
bdv65bg.pdf
BDV65B (NPN),BDV64B (PNP)Complementary SiliconPlastic Power Darlingtons. . . for use as output devices in complementary general purposeamplifier applications.http://onsemi.comFeatures10 AMPERE DARLINGTON High DC Current Gain - HFE = 1000 (min) @ 5 AdcCOMPLEMENTARY SILICON Monolithic Construction with Built-in Base Emitter Shunt ResistorsPOWER TRANSISTORS These
bdv65 65a 65b 65c.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDV65/65A/65B/65C DESCRIPTION With TO-3PN package Complement to type BDV64/64A/64B/64C DARLINGTON High DC current gain APPLICATIONS For use in general purpose amplifier applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO
bdv65 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDV65/A/B/C DESCRIPTION Collector Current -IC= 12A Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A Complement to Type BDV64/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=2
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
