BDV66A Datasheet. Specs and Replacement

Type Designator: BDV66A

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 16 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: TOP3

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BDV66A datasheet

 ..1. Size:224K  inchange semiconductor

 bdv66 bdv66a bdv66b bdv66c.pdf pdf_icon

BDV66A

isc Silicon PNP Darlington Power Transistor BDV66/A/B/C DESCRIPTION Collector Current -I = -16A C Collector-Emitter Saturation Voltage- V = -2.0V(Max.)@ I = -10A CE(sat) C Complement to Type BDV67/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching appli... See More ⇒

 9.1. Size:102K  mospec

 bdv66 bdv67.pdf pdf_icon

BDV66A

A A A ... See More ⇒

 9.2. Size:158K  inchange semiconductor

 bdv66 a b c.pdf pdf_icon

BDV66A

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDV66/A/B/C DESCRIPTION Collector Current -IC= -16A Collector-Emitter Saturation Voltage- VCE(sat)= -2.0V(Max.)@ IC= -10A Complement to Type BDV67/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(... See More ⇒

Detailed specifications: BDV64A, BDV64B, BDV64C, BDV65, BDV65A, BDV65B, BDV65C, BDV66, 2SB817, BDV66B, BDV66C, BDV66D, BDV67, BDV67A, BDV67B, BDV67C, BDV67D

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