All Transistors. BDV66A Datasheet

 

BDV66A Datasheet and Replacement


   Type Designator: BDV66A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 16 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TOP3
 

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BDV66A Datasheet (PDF)

 ..1. Size:224K  inchange semiconductor
 bdv66 bdv66a bdv66b bdv66c.pdf pdf_icon

BDV66A

isc Silicon PNP Darlington Power Transistor BDV66/A/B/CDESCRIPTIONCollector Current -I = -16ACCollector-Emitter Saturation Voltage-: V = -2.0V(Max.)@ I = -10ACE(sat) CComplement to Type BDV67/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching appli

 9.1. Size:102K  mospec
 bdv66 bdv67.pdf pdf_icon

BDV66A

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 9.2. Size:158K  inchange semiconductor
 bdv66 a b c.pdf pdf_icon

BDV66A

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDV66/A/B/C DESCRIPTION Collector Current -IC= -16A Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -10A Complement to Type BDV67/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(

Datasheet: BDV64A , BDV64B , BDV64C , BDV65 , BDV65A , BDV65B , BDV65C , BDV66 , 2N4401 , BDV66B , BDV66C , BDV66D , BDV67 , BDV67A , BDV67B , BDV67C , BDV67D .

History: CS2640 | L9013PLT1G | T1591 | CHDTD123EKGP | CHDTC143EUGP | CHDTC124XEGP | KTX212E

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