BDV66B Specs and Replacement
Type Designator: BDV66B
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TOP3
BDV66B Substitution
- BJT ⓘ Cross-Reference Search
BDV66B datasheet
bdv66 bdv66a bdv66b bdv66c.pdf 
isc Silicon PNP Darlington Power Transistor BDV66/A/B/C DESCRIPTION Collector Current -I = -16A C Collector-Emitter Saturation Voltage- V = -2.0V(Max.)@ I = -10A CE(sat) C Complement to Type BDV67/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching appli... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDV66/A/B/C DESCRIPTION Collector Current -IC= -16A Collector-Emitter Saturation Voltage- VCE(sat)= -2.0V(Max.)@ IC= -10A Complement to Type BDV67/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(... See More ⇒
Detailed specifications: BDV64B, BDV64C, BDV65, BDV65A, BDV65B, BDV65C, BDV66, BDV66A, S9013, BDV66C, BDV66D, BDV67, BDV67A, BDV67B, BDV67C, BDV67D, BDV91
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