BDV67 Datasheet and Replacement
Type Designator: BDV67
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TOP3
BDV67 Substitution
BDV67 Datasheet (PDF)
bdv67 bdv67d.pdf

isc Silicon NPN Darlington Power Transistor BDV67DDESCRIPTIONCollector Current -I = 16ACCollector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 10ACE(sat) CComplement to Type BDV66DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSO
bdv67 bdv67a bdv67b bdv67c.pdf

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDV67/A/B/CDESCRIPTIONCollector Current -I = 16ACCollector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 10ACE(sat) CComplement to Type BDV66/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifier
bdv67 67a 67b 67c 67d.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDV67/67A/67B/67C/67D DESCRIPTION With TO-3PN package Complement to type BDV66/66A/66B/66C/66D DARLINGTON High DC current gain APPLICATIONS For use in audio output stages and general amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounti
Datasheet: BDV65A , BDV65B , BDV65C , BDV66 , BDV66A , BDV66B , BDV66C , BDV66D , S9013 , BDV67A , BDV67B , BDV67C , BDV67D , BDV91 , BDV92 , BDV93 , BDV94 .
History: L8050RLT3G | T1684 | 2SC4164L | MMBT6429LT1G | 2SD1776 | 92GE37C | CHEMH1GP
Keywords - BDV67 transistor datasheet
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History: L8050RLT3G | T1684 | 2SC4164L | MMBT6429LT1G | 2SD1776 | 92GE37C | CHEMH1GP



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