All Transistors. BDW53B Datasheet

 

BDW53B Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDW53B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220

 BDW53B Transistor Equivalent Substitute - Cross-Reference Search

   

BDW53B Datasheet (PDF)

 9.1. Size:202K  inchange semiconductor
 bdw53.pdf

BDW53B BDW53B

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDW53DESCRIPTIONHigh DC Current Gain: h = 750(Min.)@ I = 1.5A, V = 3VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 45V(Min)(BR)CEOLow Collector Saturation VoltageComplement to Type BDW54Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesi

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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