BDW54 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDW54
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO220
BDW54 Transistor Equivalent Substitute - Cross-Reference Search
BDW54 Datasheet (PDF)
bdx53 bdw54.pdf
BDX53A/53B/53CBDX54B/54CCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS BDX53B, BDX53C, BDX54B AND BDX54CARE SGS-THOMSON PREFERREDSALESTYPESAPPLICATIONS AUDIO AMPLIFIERS LINEAR AND SWITCHING INDUSTRIAL32EQUIPMENT1TO-220DESCRIPTIONThe BDX53A, BDX53B and BDX53C are siliconepitaxial-base NPN power transistors inmonolithic Darlington configuration and aremoun
bdx53d bdw54.pdf
BDX53BFIBDX54BFICOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS COMPLEMENTARY PNP - NPN DEVICESAPPLICATIONS: GENERAL PURPOSE SWITCHING ANDAMPLIFIER LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTION3The BDX53BFI is silicon epitaxial-base NPN 21power transistor in monolithic Darlingtonconfiguration and are mounted in ISOWATT220ISOWATT220plastic package. It is
bdw54.pdf
INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor BDW54DESCRIPTIONHigh DC Current Gain: h = 750(Min.)@ I = -1.5A, V = -3VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOLow Collector Saturation VoltageComplement to Type BDW53Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
