BDW54B
Datasheet, Equivalent, Cross Reference Search
Type Designator: BDW54B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40
W
Maximum Collector-Base Voltage |Vcb|: 80
V
Maximum Collector-Emitter Voltage |Vce|: 80
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 4
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 1
MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package:
TO220
BDW54B
Transistor Equivalent Substitute - Cross-Reference Search
BDW54B
Datasheet (PDF)
9.1. Size:94K st
bdx53 bdw54.pdf
BDX53A/53B/53CBDX54B/54CCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS BDX53B, BDX53C, BDX54B AND BDX54CARE SGS-THOMSON PREFERREDSALESTYPESAPPLICATIONS AUDIO AMPLIFIERS LINEAR AND SWITCHING INDUSTRIAL32EQUIPMENT1TO-220DESCRIPTIONThe BDX53A, BDX53B and BDX53C are siliconepitaxial-base NPN power transistors inmonolithic Darlington configuration and aremoun
9.2. Size:43K st
bdx53d bdw54.pdf
BDX53BFIBDX54BFICOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS COMPLEMENTARY PNP - NPN DEVICESAPPLICATIONS: GENERAL PURPOSE SWITCHING ANDAMPLIFIER LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTION3The BDX53BFI is silicon epitaxial-base NPN 21power transistor in monolithic Darlingtonconfiguration and are mounted in ISOWATT220ISOWATT220plastic package. It is
9.3. Size:202K inchange semiconductor
bdw54.pdf
INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor BDW54DESCRIPTIONHigh DC Current Gain: h = 750(Min.)@ I = -1.5A, V = -3VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOLow Collector Saturation VoltageComplement to Type BDW53Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD
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