All Transistors. BDW56 Datasheet

 

BDW56 Datasheet and Replacement


   Type Designator: BDW56
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 125 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO126
 

 BDW56 Substitution

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BDW56 Datasheet (PDF)

 ..1. Size:215K  inchange semiconductor
 bdw56 bdw58 bdw60.pdf pdf_icon

BDW56

isc Silicon PNP Power Transistors BDW56/58/60DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = -45V- BDW56CEO(SUS)= -60V- BDW58= -80V- BDW60Complement to Type BDW55/57/59Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in professional equipment such astelecommunication and etc.ABSOLUTE MAXIMUM R

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Keywords - BDW56 transistor datasheet

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