BDW56 Specs and Replacement
Type Designator: BDW56
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 125 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO126
BDW56 Substitution
- BJT ⓘ Cross-Reference Search
BDW56 datasheet
isc Silicon PNP Power Transistors BDW56/58/60 DESCRIPTION Collector Emitter Sustaining Voltage- V = -45V- BDW56 CEO(SUS) = -60V- BDW58 = -80V- BDW60 Complement to Type BDW55/57/59 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in professional equipment such as telecommunication and etc. ABSOLUTE MAXIMUM R... See More ⇒
Detailed specifications: BDW53B, BDW53C, BDW53D, BDW54, BDW54A, BDW54B, BDW54C, BDW55, S9014, BDW57, BDW58, BDW59, BDW60, BDW63, BDW63A, BDW63B, BDW63C
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