All Transistors. BDW63C Datasheet

 

BDW63C Datasheet, Equivalent, Cross Reference Search

Type Designator: BDW63C

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220

BDW63C Transistor Equivalent Substitute - Cross-Reference Search

 

BDW63C Datasheet (PDF)

5.1. bdw63 a b c d.pdf Size:253K _inchange_semiconductor

BDW63C
BDW63C

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D DESCRIPTION ·Collector Current -IC= 6A ·High DC Current Gain-hFE= 750(Min.)@ IC= 2A ·Complement to Type BDW64/A/B/C/D APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALU

Datasheet: BDW56 , BDW57 , BDW58 , BDW59 , BDW60 , BDW63 , BDW63A , BDW63B , BC546 , BDW63D , BDW64 , BDW64A , BDW64B , BDW64C , BDW64D , BDW73 , BDW73A .

 


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