All Transistors. BDW83B Datasheet

 

BDW83B Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDW83B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO218

 BDW83B Transistor Equivalent Substitute - Cross-Reference Search

   

BDW83B Datasheet (PDF)

 ..1. Size:222K  inchange semiconductor
bdw83 bdw83a bdw83b bdw83c.pdf

BDW83B
BDW83B

isc Silicon NPN Darlington Power Transistor BDW83/A/B/CDESCRIPTIONCollector Current -I = 15ACHigh DC Current Gain-h = 750(Min)@ I = 6AFE CComplement to Type BDW84/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsABSOLUTE MAXIMUM RATINGS(T =

 9.1. Size:67K  st
bdw83 bdw84.pdf

BDW83B
BDW83B

BDW83CBDW84CCOMPLEMENTARY SILICON POWER DARLINGTONTRANSISTORS BDW83C IS A SGS-THOMSON PREFERREDSALESTYPE COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS 3 LINEAR AND SWITCHING INDUSTRIAL2EQUIPMENT1DESCRIPTION TO-218The BDW83C is a silicon epitaxial-base NPNpower monolithic Darlington transis

 9.2. Size:218K  inchange semiconductor
bdw83c.pdf

BDW83B
BDW83B

isc Silicon NPN Darlington Power Transistor BDW83CDESCRIPTIONCollector Current -I = 15ACHigh DC Current Gain-h = 750(Min)@ I = 6AFE CComplement to Type BDW84CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 9.3. Size:220K  inchange semiconductor
bdw83d.pdf

BDW83B
BDW83B

isc Silicon NPN Darlington Power Transistor BDW83DDESCRIPTIONCollector Current -I = 15ACHigh DC Current Gain-h = 750(Min)@ I = 6AFE CComplement to Type BDW84DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 9.4. Size:123K  inchange semiconductor
bdw83 83a 83b 83c 83d.pdf

BDW83B
BDW83B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDW83/83A/83B/83C/83D DESCRIPTION With TO-3PN package Complement to type BDW84/84A/84B/84C/84D DARLINGTON High DC current gain APPLICATIONS For use in power linear and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified ou

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2N1998 | BDW22B

 

 
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