2N2926-1 Specs and Replacement
Type Designator: 2N2926-1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92
2N2926-1 Substitution
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2N2926-1 datasheet
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2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet - production data Features BVCEO 60 V IC (max) 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65 C to +200 C Hi-Rel NPN dual matched bipolar transistor TO-77 LCC-6 Linear gain characteristics ESCC qualified European preferred part list - EPPL Figure 1. Internal schematic ... See More ⇒
Detailed specifications: 2N2920A, 2N2920DCSM, 2N2921, 2N2922, 2N2923, 2N2924, 2N2925, 2N2926, S8050, 2N2926-2, 2N2926-4, 2N2926-5, 2N2926B, 2N2926G, 2N2926O, 2N2926R, 2N2926Y
Keywords - 2N2926-1 pdf specs
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History: MJ421S
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