BDX11-4 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BDX11-4 Specs and Replacement

Type Designator: BDX11-4

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 117 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 0.8 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

BDX11-4 Substitution

- BJT ⓘ Cross-Reference Search

BDX11-4 datasheet

9.1. Size:12K semelab

bdx11.pdf pdf_icon

BDX11 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 140V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒

9.2. Size:178K inchange semiconductor

bdx11.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor BDX11 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V (Min) (BR)CEO High Current Capability Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching applica... See More ⇒

Detailed specifications: BDX10 , BDX10-4 , BDX10-5 , BDX10-6 , BDX10-7 , BDX10C , BDX10H , BDX11 , D882P , BDX11-5 , BDX11-6 , BDX11-7 , BDX12 , BDX13 , BDX13-4 , BDX13-5 , BDX13-6 .