All Transistors. BDX13 Datasheet

 

BDX13 Datasheet and Replacement


   Type Designator: BDX13
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 117 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
 

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BDX13 Datasheet (PDF)

 ..1. Size:195K  inchange semiconductor
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BDX13

INCHANGE Semiconductorisc Silicon NPN Power Transistor BDX13DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h =15-60@I = 8AFE CCollector-Emitter Saturation Voltage-: V )= 1.0 V(Max)@ I = 4ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose switching

Datasheet: BDX10C , BDX10H , BDX11 , BDX11-4 , BDX11-5 , BDX11-6 , BDX11-7 , BDX12 , S9018 , BDX13-4 , BDX13-5 , BDX13-6 , BDX13-7 , BDX14 , BDX15 , BDX16 , BDX18 .

History: IR413

Keywords - BDX13 transistor datasheet

 BDX13 cross reference
 BDX13 equivalent finder
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