BDX18N Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX18N
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO3
BDX18N Transistor Equivalent Substitute - Cross-Reference Search
BDX18N Datasheet (PDF)
bdx18-n.pdf
BDX18 BDX18NPNP SILICON TRANSISTOR EPITAXIAL BASELF Large Signal Power AmplificationHigh Current SwitchingSuitable for :Series and shunt regulatorsHigh Fidelity AmplifiersPower-switching circuitsABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDX18VCEO Collector-Emitter Voltage -60 VBDX18N-70BDX18VCER Collector-Emitter Voltage RBE=100 VBDX18N-65BDX18
bdx18a.pdf
BDX18ADimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 70V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
bdx18.pdf
isc Silicon PNP Power Transistors BDX18DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = -4AFE CCollector-Emitter Saturation Voltage-: V )= -1.1V(Max)@ I = -4ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIM
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
