BDX18N Specs and Replacement
Type Designator: BDX18N
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO3
BDX18N Substitution
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BDX18N datasheet
BDX18 BDX18N PNP SILICON TRANSISTOR EPITAXIAL BASE LF Large Signal Power Amplification High Current Switching Suitable for Series and shunt regulators High Fidelity Amplifiers Power-switching circuits ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX18 VCEO Collector-Emitter Voltage -60 V BDX18N -70 BDX18 VCER Collector-Emitter Voltage RBE=100 V BDX18N -65 BDX18 ... See More ⇒
BDX18A Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 70V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒
isc Silicon PNP Power Transistors BDX18 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = -4A FE C Collector-Emitter Saturation Voltage- V )= -1.1V(Max)@ I = -4A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIM... See More ⇒
Detailed specifications: BDX13-4, BDX13-5, BDX13-6, BDX13-7, BDX14, BDX15, BDX16, BDX18, 2N2222, BDX20, BDX22, BDX22-4, BDX22-5, BDX22-6, BDX22-7, BDX23, BDX23-4
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