2N2926Y Specs and Replacement

Type Designator: 2N2926Y

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO92

 2N2926Y Substitution

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2N2926Y datasheet

 8.1. Size:35K  general electric

2n2926.pdf pdf_icon

2N2926Y

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 9.1. Size:331K  general electric

2n292 2n293.pdf pdf_icon

2N2926Y

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 9.2. Size:407K  st

2n2920ahr.pdf pdf_icon

2N2926Y

2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet - production data Features BVCEO 60 V IC (max) 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65 C to +200 C Hi-Rel NPN dual matched bipolar transistor TO-77 LCC-6 Linear gain characteristics ESCC qualified European preferred part list - EPPL Figure 1. Internal schematic ... See More ⇒

Detailed specifications: 2N2926-1, 2N2926-2, 2N2926-4, 2N2926-5, 2N2926B, 2N2926G, 2N2926O, 2N2926R, BC557, 2N2927, 2N2927-46, 2N2927-51, 2N2928, 2N2929, 2N292A, 2N293, 2N2930

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