2N2927 Specs and Replacement
Type Designator: 2N2927
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO5
2N2927 Substitution
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2N2927 datasheet
2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet - production data Features BVCEO 60 V IC (max) 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65 C to +200 C Hi-Rel NPN dual matched bipolar transistor TO-77 LCC-6 Linear gain characteristics ESCC qualified European preferred part list - EPPL Figure 1. Internal schematic ... See More ⇒
2N2920ADCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 60V CEO 6.22 0.13 A = 1.27 0.13 I = 0.03A C (0... See More ⇒
Detailed specifications: 2N2926-2, 2N2926-4, 2N2926-5, 2N2926B, 2N2926G, 2N2926O, 2N2926R, 2N2926Y, TIP42C, 2N2927-46, 2N2927-51, 2N2928, 2N2929, 2N292A, 2N293, 2N2930, 2N2931
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