BDX45 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX45
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 350 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO126
BDX45 Transistor Equivalent Substitute - Cross-Reference Search
BDX45 Datasheet (PDF)
bdx45 bdx47 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BDX45; BDX47PNP Darlington transistorsProduct specification 1997 Jul 02Supersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP Darlington transistors BDX45; BDX47FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V)1
bdx45 bdx47.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BDX45; BDX47PNP Darlington transistorsProduct specification 1997 Jul 02Supersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP Darlington transistors BDX45; BDX47FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V)1
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
