BDX45 Specs and Replacement
Type Designator: BDX45
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 350 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO126
BDX45 Substitution
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BDX45 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BDX45; BDX47 PNP Darlington transistors Product specification 1997 Jul 02 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP Darlington transistors BDX45; BDX47 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V) 1... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BDX45; BDX47 PNP Darlington transistors Product specification 1997 Jul 02 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP Darlington transistors BDX45; BDX47 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V) 1... See More ⇒
Detailed specifications: BDX41, BDX41-4, BDX41-5, BDX41-6, BDX41-7, BDX42, BDX43, BDX44, D965, BDX46, BDX47, BDX50, BDX50-4, BDX50-5, BDX50-6, BDX50-7, BDX51
Keywords - BDX45 pdf specs
BDX45 cross reference
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