BDX56 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX56
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO39
Datasheet: BDX54C , BDX54CFI , BDX54D , BDX54E , BDX54F , BDX54H , BDX54S , BDX55 , TIP41 , BDX57 , BDX60 , BDX60-4 , BDX60-5 , BDX60-6 , BDX60-7 , BDX61 , BDX61-4 .
History: 2N1965-46 | GT108B | BD422