BDX60-5 Datasheet and Replacement
Type Designator: BDX60-5
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO3
BDX60-5 Substitution
BDX60-5 Datasheet (PDF)
bdx60.pdf

isc Silicon NPN Power Transistor BDX60DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V (Min)(BR)CEOHigh Current CapabilityWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplications.ABSOLUTE MAXIMUM
Datasheet: BDX54F , BDX54H , BDX54S , BDX55 , BDX56 , BDX57 , BDX60 , BDX60-4 , C5198 , BDX60-6 , BDX60-7 , BDX61 , BDX61-4 , BDX61-5 , BDX61-6 , BDX61-7 , BDX62 .
History: MM1893 | CSA988P | D38H6 | A1300 | BSR17A
Keywords - BDX60-5 transistor datasheet
BDX60-5 cross reference
BDX60-5 equivalent finder
BDX60-5 lookup
BDX60-5 substitution
BDX60-5 replacement
History: MM1893 | CSA988P | D38H6 | A1300 | BSR17A



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