All Transistors. BDX60-6 Datasheet

 

BDX60-6 Datasheet and Replacement


   Type Designator: BDX60-6
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO3
 

 BDX60-6 Substitution

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BDX60-6 Datasheet (PDF)

 9.1. Size:201K  inchange semiconductor
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BDX60-6

isc Silicon NPN Power Transistor BDX60DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V (Min)(BR)CEOHigh Current CapabilityWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplications.ABSOLUTE MAXIMUM

Datasheet: BDX54H , BDX54S , BDX55 , BDX56 , BDX57 , BDX60 , BDX60-4 , BDX60-5 , 2N3904 , BDX60-7 , BDX61 , BDX61-4 , BDX61-5 , BDX61-6 , BDX61-7 , BDX62 , BDX62A .

History: 3CK005 | 2N987 | 2N4047 | 3CK2 | S9014W-H | 2SA753

Keywords - BDX60-6 transistor datasheet

 BDX60-6 cross reference
 BDX60-6 equivalent finder
 BDX60-6 lookup
 BDX60-6 substitution
 BDX60-6 replacement

 

 
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