All Transistors. BDX60-6 Datasheet

 

BDX60-6 Datasheet and Replacement


   Type Designator: BDX60-6
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO3
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BDX60-6 Datasheet (PDF)

 9.1. Size:201K  inchange semiconductor
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BDX60-6

isc Silicon NPN Power Transistor BDX60DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V (Min)(BR)CEOHigh Current CapabilityWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplications.ABSOLUTE MAXIMUM

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: AUY22-4 | 2SA451H | 2N3676 | 2SC3135S | 3DD5G | 2SA499O | DTL1642

Keywords - BDX60-6 transistor datasheet

 BDX60-6 cross reference
 BDX60-6 equivalent finder
 BDX60-6 lookup
 BDX60-6 substitution
 BDX60-6 replacement

 

 
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