BDX62 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX62
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO3
BDX62 Transistor Equivalent Substitute - Cross-Reference Search
BDX62 Datasheet (PDF)
bdx62.pdf
PNP SILICON DARLINGTONS PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitBDX62 -60 BDX62A -80 VCEO Collector-Emitter Voltage V BDX62B -100 BDX62C -120 BDX62 -60 BDX62A -80 VCEV Collector-EmitterVoltage VBE=-1.5 V V BDX62B -100 BDX62C -120 BDX62 BDX62A
bdx62 bdx62a bdx62b bdx62c.pdf
isc Silicon PNP Darlington Power Transistor BDX62/A/B/CDESCRIPTIONCollector Current -I = -8ACHigh DC Current Gain-h = 1000(Min)@ I = -3AFE CComplement to Type BDX63/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RAT
bdx62 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX62/A/B/C DESCRIPTION Collector Current -IC= -8A High DC Current Gain-hFE= 1000(Min)@ IC= -3A Complement to Type BDX63/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER V
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2N194A