BDX64A Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX64A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO3
BDX64A Transistor Equivalent Substitute - Cross-Reference Search
BDX64A Datasheet (PDF)
bdx64 bdx64a bdx64b bdx64c.pdf
isc Silicon PNP Darlington Power Transistor BDX64/A/B/CDESCRIPTIONCollector Current -I = -12ACHigh DC Current Gain-h = 1000(Min)@ I = -5AFE CComplement to Type BDX65/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RA
bdx64-a-b-c.pdf
BDX 64, A, B, CPNP SILICON DARLINGTONSPNP SILICON DARLINGTONSGeneral purpose darlingtons designed for power amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDX64 -60BDX64A -80VCEO Collector-Emitter Voltage VBDX64B-100BDX64C-120BDX64 -60BDX64A -80VCEV Collector-EmitterVoltage VBE=-1.5 V VBDX64B -100BDX64C -120BDX64BDX64
bdx64.pdf
PNP SILICON DARLINGTONS PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitBDX64 -60 BDX64A -80 VCEO Collector-Emitter Voltage V BDX64B -100 BDX64C -120 BDX64 -60 BDX64A -80 VCEV Collector-EmitterVoltage VBE=-1.5 V V BDX64B -100 BDX64C -120 BDX64 BDX64A
bdx64c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX64C DESCRIPTION With TO-3 package DARLINGTON Complement to type BDX65C APPLICATIONS Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25
bdx64 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX64/A/B/C DESCRIPTION Collector Current -IC= -12A High DC Current Gain-hFE= 1000(Min)@ IC= -5A Complement to Type BDX65/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
