BDX64B Datasheet and Replacement

isc Silicon PNP Darlington Power Transistor BDX64/A/B/CDESCRIPTIONCollector Current -I = -12ACHigh DC Current Gain-h = 1000(Min)@ I = -5AFE CComplement to Type BDX65/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RA

BDX 64, A, B, CPNP SILICON DARLINGTONSPNP SILICON DARLINGTONSGeneral purpose darlingtons designed for power amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDX64 -60BDX64A -80VCEO Collector-Emitter Voltage VBDX64B-100BDX64C-120BDX64 -60BDX64A -80VCEV Collector-EmitterVoltage VBE=-1.5 V VBDX64B -100BDX64C -120BDX64BDX64

PNP SILICON DARLINGTONS PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitBDX64 -60 BDX64A -80 VCEO Collector-Emitter Voltage V BDX64B -100 BDX64C -120 BDX64 -60 BDX64A -80 VCEV Collector-EmitterVoltage VBE=-1.5 V V BDX64B -100 BDX64C -120 BDX64 BDX64A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX64C DESCRIPTION With TO-3 package DARLINGTON Complement to type BDX65C APPLICATIONS Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX64/A/B/C DESCRIPTION Collector Current -IC= -12A High DC Current Gain-hFE= 1000(Min)@ IC= -5A Complement to Type BDX65/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER