BDX64B Specs and Replacement
Type Designator: BDX64B
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO3
BDX64B Substitution
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BDX64B datasheet
bdx64 bdx64a bdx64b bdx64c.pdf ![]()
isc Silicon PNP Darlington Power Transistor BDX64/A/B/C DESCRIPTION Collector Current -I = -12A C High DC Current Gain-h = 1000(Min)@ I = -5A FE C Complement to Type BDX65/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RA... See More ⇒
BDX 64, A, B, C PNP SILICON DARLINGTONS PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX64 -60 BDX64A -80 VCEO Collector-Emitter Voltage V BDX64B -100 BDX64C -120 BDX64 -60 BDX64A -80 VCEV Collector-EmitterVoltage VBE=-1.5 V V BDX64B -100 BDX64C -120 BDX64 BDX64... See More ⇒
PNP SILICON DARLINGTONS PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX64 -60 BDX64A -80 VCEO Collector-Emitter Voltage V BDX64B -100 BDX64C -120 BDX64 -60 BDX64A -80 VCEV Collector-EmitterVoltage VBE=-1.5 V V BDX64B -100 BDX64C -120 BDX64 BDX64A ... See More ⇒
Detailed specifications: BDX62L, BDX63, BDX63A, BDX63B, BDX63C, BDX63L, BDX64, BDX64A, 2SD718, BDX64C, BDX64L, BDX65, BDX65A, BDX65B, BDX65C, BDX65L, BDX66
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