All Transistors. BDX65A Datasheet

 

BDX65A Datasheet, Equivalent, Cross Reference Search

Type Designator: BDX65A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 117 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: TO3

BDX65A Transistor Equivalent Substitute - Cross-Reference Search

 

BDX65A Datasheet (PDF)

1.1. bdx65a.pdf Size:130K _inchange_semiconductor

BDX65A
BDX65A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX65A DESCRIPTION ·With TO-3 package ·DARLINGTON ·Complement to type BDX64A APPLICATIONS ·Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25?)

5.1. bdx65-a-b-c.pdf Size:167K _comset

BDX65A
BDX65A

BDX 65, A, B, C NPN SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX65 60 BDX65A 80 VCEO Collector-Emitter Voltage V BDX65B 100 BDX65C 120 BDX65 80 BDX65A 100 VCEV Collector-EmitterVoltage VBE=-1.5 V V BDX65B 120 BDX65C 120 BDX65 BDX65A VEBO Emitter-Base Voltage 5.0 V B

5.2. bdx65.pdf Size:117K _inchange_semiconductor

BDX65A
BDX65A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX65 DESCRIPTION Ў¤ With TO-3 package Ў¤ DARLINGTON Ў¤ Complement to type BDX64 APPLICATIONS Ў¤ Designed for power amplification and switching applications. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25Ўж

5.3. bdx65 a b c.pdf Size:82K _inchange_semiconductor

BDX65A
BDX65A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX65/A/B/C DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDX64/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE U

Datasheet: BDX63C , BDX63L , BDX64 , BDX64A , BDX64B , BDX64C , BDX64L , BDX65 , A733 , BDX65B , BDX65C , BDX65L , BDX66 , BDX66A , BDX66B , BDX66C , BDX66L .

 


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