BDX65A Specs and Replacement
Type Designator: BDX65A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO3
BDX65A Substitution
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BDX65A datasheet
bdx65 bdx65a bdx65b bdx65c.pdf ![]()
isc Silicon NPN Darlington Power Transistor BDX65/A/B/C DESCRIPTION Collector Current -I = 12A C High DC Current Gain-h = 1000(Min)@ I = 5A FE C Complement to Type BDX64/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATI... See More ⇒
BDX 65, A, B, C NPN SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX65 60 BDX65A 80 VCEO Collector-Emitter Voltage V BDX65B 100 BDX65C 120 BDX65 80 BDX65A 100 VCEV Collector-EmitterVoltage VBE=-1.5 V V BDX65B 120 BDX65C 120 BDX65 BDX65A VEBO Emitter-Base Voltage 5.0 V... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX65 DESCRIPTION With TO-3 package DARLINGTON Complement to type BDX64 APPLICATIONS Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ... See More ⇒
Detailed specifications: BDX63C, BDX63L, BDX64, BDX64A, BDX64B, BDX64C, BDX64L, BDX65, S9014, BDX65B, BDX65C, BDX65L, BDX66, BDX66A, BDX66B, BDX66C, BDX66L
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