BDX65A Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX65A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO3
BDX65A Transistor Equivalent Substitute - Cross-Reference Search
BDX65A Datasheet (PDF)
bdx65a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX65A DESCRIPTION With TO-3 package DARLINGTON Complement to type BDX64A APPLICATIONS Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25
bdx65 bdx65a bdx65b bdx65c.pdf
isc Silicon NPN Darlington Power Transistor BDX65/A/B/CDESCRIPTIONCollector Current -I = 12ACHigh DC Current Gain-h = 1000(Min)@ I = 5AFE CComplement to Type BDX64/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RATI
bdx65-a-b-c.pdf
BDX 65, A, B, CNPN SILICON DARLINGTONSGeneral purpose darlingtons designed for power amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDX65 60BDX65A 80VCEO Collector-Emitter Voltage VBDX65B 100BDX65C 120BDX65 80BDX65A 100VCEV Collector-EmitterVoltage VBE=-1.5 V VBDX65B 120BDX65C 120BDX65BDX65AVEBO Emitter-Base Voltage 5.0 V
bdx65.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX65 DESCRIPTION With TO-3 package DARLINGTON Complement to type BDX64 APPLICATIONS Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25
bdx65 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX65/A/B/C DESCRIPTION Collector Current -IC= 12A High DC Current Gain-hFE= 1000(Min)@ IC= 5A Complement to Type BDX64/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VA
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
