BDX65C PDF and Equivalents Search

 

BDX65C Specs and Replacement

Type Designator: BDX65C

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 117 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 16 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: TO3

 BDX65C Substitution

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BDX65C datasheet

 ..1. Size:212K  inchange semiconductor

bdx65 bdx65a bdx65b bdx65c.pdf pdf_icon

BDX65C

isc Silicon NPN Darlington Power Transistor BDX65/A/B/C DESCRIPTION Collector Current -I = 12A C High DC Current Gain-h = 1000(Min)@ I = 5A FE C Complement to Type BDX64/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATI... See More ⇒

 9.1. Size:167K  comset

bdx65-a-b-c.pdf pdf_icon

BDX65C

BDX 65, A, B, C NPN SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX65 60 BDX65A 80 VCEO Collector-Emitter Voltage V BDX65B 100 BDX65C 120 BDX65 80 BDX65A 100 VCEV Collector-EmitterVoltage VBE=-1.5 V V BDX65B 120 BDX65C 120 BDX65 BDX65A VEBO Emitter-Base Voltage 5.0 V... See More ⇒

 9.2. Size:117K  inchange semiconductor

bdx65.pdf pdf_icon

BDX65C

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX65 DESCRIPTION With TO-3 package DARLINGTON Complement to type BDX64 APPLICATIONS Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ... See More ⇒

 9.3. Size:82K  inchange semiconductor

bdx65 a b c.pdf pdf_icon

BDX65C

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX65/A/B/C DESCRIPTION Collector Current -IC= 12A High DC Current Gain-hFE= 1000(Min)@ IC= 5A Complement to Type BDX64/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VA... See More ⇒

Detailed specifications: BDX64, BDX64A, BDX64B, BDX64C, BDX64L, BDX65, BDX65A, BDX65B, A733, BDX65L, BDX66, BDX66A, BDX66B, BDX66C, BDX66L, BDX67, BDX67A

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