BDX68B Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX68B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO3
BDX68B Transistor Equivalent Substitute - Cross-Reference Search
BDX68B Datasheet (PDF)
bdx68 bdx68a bdx68b bdx68c.pdf
isc Silicon PNP Darlington Power Transistor BDX68/A/B/CDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -20AFE CLow Saturation VoltageComplement to Type BDX69/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RATIN
bdx68 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX68/A/B/C DESCRIPTION High DC Current Gain- : hFE= 1000(Min)@ IC= -20A Low Saturation Voltage Complement to Type BDX69/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETE
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
