All Transistors. BDX68B Datasheet

 

BDX68B Datasheet and Replacement


   Type Designator: BDX68B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO3
 

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BDX68B Datasheet (PDF)

 ..1. Size:213K  inchange semiconductor
bdx68 bdx68a bdx68b bdx68c.pdf pdf_icon

BDX68B

isc Silicon PNP Darlington Power Transistor BDX68/A/B/CDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -20AFE CLow Saturation VoltageComplement to Type BDX69/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RATIN

 9.1. Size:266K  inchange semiconductor
bdx68 a b c.pdf pdf_icon

BDX68B

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX68/A/B/C DESCRIPTION High DC Current Gain- : hFE= 1000(Min)@ IC= -20A Low Saturation Voltage Complement to Type BDX69/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETE

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: SGS137 | DMA56109 | 2N6047

Keywords - BDX68B transistor datasheet

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