BDX68C Specs and Replacement
Type Designator: BDX68C
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 1000
Package: TO3
BDX68C Substitution
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BDX68C datasheet
bdx68 bdx68a bdx68b bdx68c.pdf ![]()
isc Silicon PNP Darlington Power Transistor BDX68/A/B/C DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -20A FE C Low Saturation Voltage Complement to Type BDX69/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATIN... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX68/A/B/C DESCRIPTION High DC Current Gain- hFE= 1000(Min)@ IC= -20A Low Saturation Voltage Complement to Type BDX69/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETE... See More ⇒
Detailed specifications: BDX67 , BDX67A , BDX67B , BDX67C , BDX67L , BDX68 , BDX68A , BDX68B , TIP127 , BDX69 , BDX69A , BDX69B , BDX69C , BDX70 , BDX71 , BDX72 , BDX73 .
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