All Transistors. BDX69 Datasheet

 

BDX69 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDX69
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO3

 BDX69 Transistor Equivalent Substitute - Cross-Reference Search

   

BDX69 Datasheet (PDF)

 ..1. Size:213K  inchange semiconductor
bdx69 bdx69a bdx69b bdx69c.pdf

BDX69
BDX69

isc Silicon NPN Darlington Power Transistor BDX69/A/B/CDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 20AFE CLow Saturation VoltageComplement to Type BDX68/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RATING

 ..2. Size:213K  inchange semiconductor
bdx69 a b c.pdf

BDX69
BDX69

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX69/A/B/C DESCRIPTION High DC Current Gain- : hFE= 1000(Min)@ IC= 20A Low Saturation Voltage Complement to Type BDX68/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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