BDX69 Datasheet and Replacement
Type Designator: BDX69
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO3
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BDX69 Datasheet (PDF)
bdx69 bdx69a bdx69b bdx69c.pdf

isc Silicon NPN Darlington Power Transistor BDX69/A/B/CDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 20AFE CLow Saturation VoltageComplement to Type BDX68/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RATING
bdx69 a b c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX69/A/B/C DESCRIPTION High DC Current Gain- : hFE= 1000(Min)@ IC= 20A Low Saturation Voltage Complement to Type BDX68/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: NB221YX | 2SA1262 | T11
Keywords - BDX69 transistor datasheet
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History: NB221YX | 2SA1262 | T11



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