BDX69 Specs and Replacement
Type Designator: BDX69
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO3
BDX69 Substitution
- BJT ⓘ Cross-Reference Search
BDX69 datasheet
bdx69 bdx69a bdx69b bdx69c.pdf ![]()
isc Silicon NPN Darlington Power Transistor BDX69/A/B/C DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 20A FE C Low Saturation Voltage Complement to Type BDX68/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX69/A/B/C DESCRIPTION High DC Current Gain- hFE= 1000(Min)@ IC= 20A Low Saturation Voltage Complement to Type BDX68/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER... See More ⇒
Detailed specifications: BDX67A , BDX67B , BDX67C , BDX67L , BDX68 , BDX68A , BDX68B , BDX68C , 2SD313 , BDX69A , BDX69B , BDX69C , BDX70 , BDX71 , BDX72 , BDX73 , BDX74 .
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