BDX69A Datasheet and Replacement
Type Designator: BDX69A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO3
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BDX69A Datasheet (PDF)
bdx69 bdx69a bdx69b bdx69c.pdf

isc Silicon NPN Darlington Power Transistor BDX69/A/B/CDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 20AFE CLow Saturation VoltageComplement to Type BDX68/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RATING
bdx69 a b c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX69/A/B/C DESCRIPTION High DC Current Gain- : hFE= 1000(Min)@ IC= 20A Low Saturation Voltage Complement to Type BDX68/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: STA3360PI | U2T401 | KTX213E | 2N1032B | MMS8550 | HN1C01F | UN9110S
Keywords - BDX69A transistor datasheet
BDX69A cross reference
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History: STA3360PI | U2T401 | KTX213E | 2N1032B | MMS8550 | HN1C01F | UN9110S



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