BDX69A Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX69A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO3
BDX69A Transistor Equivalent Substitute - Cross-Reference Search
BDX69A Datasheet (PDF)
bdx69 bdx69a bdx69b bdx69c.pdf
isc Silicon NPN Darlington Power Transistor BDX69/A/B/CDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 20AFE CLow Saturation VoltageComplement to Type BDX68/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RATING
bdx69 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX69/A/B/C DESCRIPTION High DC Current Gain- : hFE= 1000(Min)@ IC= 20A Low Saturation Voltage Complement to Type BDX68/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER
Datasheet: BDX67B , BDX67C , BDX67L , BDX68 , BDX68A , BDX68B , BDX68C , BDX69 , 2SC2383Y , BDX69B , BDX69C , BDX70 , BDX71 , BDX72 , BDX73 , BDX74 , BDX75 .
