All Transistors. BDX69C Datasheet

 

BDX69C Datasheet and Replacement


   Type Designator: BDX69C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO3
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BDX69C Datasheet (PDF)

 ..1. Size:213K  inchange semiconductor
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BDX69C

isc Silicon NPN Darlington Power Transistor BDX69/A/B/CDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 20AFE CLow Saturation VoltageComplement to Type BDX68/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RATING

 9.1. Size:213K  inchange semiconductor
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BDX69C

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX69/A/B/C DESCRIPTION High DC Current Gain- : hFE= 1000(Min)@ IC= 20A Low Saturation Voltage Complement to Type BDX68/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: D62T6050 | UN1213 | 2SD204 | CMBT4123 | 2SD390 | TEC9011E | BFG51

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