BDX69C Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX69C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO3
BDX69C Transistor Equivalent Substitute - Cross-Reference Search
BDX69C Datasheet (PDF)
5.1. bdx69 a b c.pdf 
Size:213K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX69/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= 20A ·Low Saturation Voltage ·Complement to Type BDX68/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALU
Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .
