BDX69C Specs and Replacement
Type Designator: BDX69C
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO3
BDX69C Substitution
BDX69C datasheet
bdx69 bdx69a bdx69b bdx69c.pdf
isc Silicon NPN Darlington Power Transistor BDX69/A/B/C DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 20A FE C Low Saturation Voltage Complement to Type BDX68/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
bdx69 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX69/A/B/C DESCRIPTION High DC Current Gain- hFE= 1000(Min)@ IC= 20A Low Saturation Voltage Complement to Type BDX68/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER... See More ⇒
Detailed specifications: BDX67L , BDX68 , BDX68A , BDX68B , BDX68C , BDX69 , BDX69A , BDX69B , SS8050 , BDX70 , BDX71 , BDX72 , BDX73 , BDX74 , BDX75 , BDX77 , BDX77F .
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