BDX84B Specs and Replacement
Type Designator: BDX84B
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO3
BDX84B Substitution
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BDX84B datasheet
bdx84 bdx84a bdx84b bdx84c.pdf 
isc Silicon PNP Darlington Power Transistor BDX84/A/B/C DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -45V(Min)- BDX84; -60V(Min)- BDX84A CEO(SUS) -80V(Min)- BDX84B; -100V(Min)- BDX84C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Hammer drivers ... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX84/A/B/C DESCRIPTION High DC Current Gain- hFE= 1000(Min)@ IC= -5A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -45V(Min)- BDX84; -60V(Min)- BDX84A -80V(Min)- BDX84B; -100V(Min)- BDX84C APPLICATIONS Power switching Hammer drivers Series and shunt regulators ... See More ⇒
Detailed specifications: BDX78 , BDX78F , BDX83 , BDX83A , BDX83B , BDX83C , BDX84 , BDX84A , D965 , BDX84C , BDX85 , BDX85A , BDX85B , BDX85C , BDX86 , BDX86A , BDX86B .
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