BDY13-16 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BDY13-16 Specs and Replacement

Type Designator: BDY13-16

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 26 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO3

BDY13-16 Substitution

- BJT ⓘ Cross-Reference Search

BDY13-16 datasheet

8.1. Size:207K inchange semiconductor

bdy13-6.pdf pdf_icon

isc Silicon NPN Power Transistor BDY13-6 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Collector-Emitter Saturation Voltage- V )= 1V(Max)@ I = 3A CE(sat C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATI... See More ⇒

Detailed specifications: BDY12-10 , BDY12-16 , BDY12-6 , BDY12B , BDY12C , BDY12D , BDY13 , BDY13-10 , C945 , BDY13-6 , BDY13B , BDY13C , BDY13D , BDY15 , BDY15A , BDY15B , BDY15C .