All Transistors. BDY13-16 Datasheet

 

BDY13-16 Datasheet and Replacement


   Type Designator: BDY13-16
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 26 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO3
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BDY13-16 Datasheet (PDF)

 8.1. Size:207K  inchange semiconductor
 bdy13-6.pdf pdf_icon

BDY13-16

isc Silicon NPN Power Transistor BDY13-6DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 1V(Max)@ I = 3ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF signal powe amplifier applications.ABSOLUTE MAXIMUM RATI

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD521 | 3DA75A

Keywords - BDY13-16 transistor datasheet

 BDY13-16 cross reference
 BDY13-16 equivalent finder
 BDY13-16 lookup
 BDY13-16 substitution
 BDY13-16 replacement

 

 
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