All Transistors. BDY13C Datasheet

 

BDY13C Datasheet and Replacement


   Type Designator: BDY13C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 26 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO3
 

 BDY13C Substitution

   - BJT ⓘ Cross-Reference Search

   

BDY13C Datasheet (PDF)

 9.1. Size:207K  inchange semiconductor
 bdy13-6.pdf pdf_icon

BDY13C

isc Silicon NPN Power Transistor BDY13-6DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 1V(Max)@ I = 3ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF signal powe amplifier applications.ABSOLUTE MAXIMUM RATI

Datasheet: BDY12B , BDY12C , BDY12D , BDY13 , BDY13-10 , BDY13-16 , BDY13-6 , BDY13B , C5198 , BDY13D , BDY15 , BDY15A , BDY15B , BDY15C , BDY16 , BDY16A , BDY16B .

History: FHT5401-ME | SC159 | BLW10 | TMPA812M5 | KT210A | GES5131 | BUF405AFI

Keywords - BDY13C transistor datasheet

 BDY13C cross reference
 BDY13C equivalent finder
 BDY13C lookup
 BDY13C substitution
 BDY13C replacement

 

 
Back to Top

 


 
.