BDY13C Specs and Replacement
Type Designator: BDY13C
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 26 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO3
BDY13C Substitution
- BJT ⓘ Cross-Reference Search
BDY13C datasheet
isc Silicon NPN Power Transistor BDY13-6 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Collector-Emitter Saturation Voltage- V )= 1V(Max)@ I = 3A CE(sat C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATI... See More ⇒
Detailed specifications: BDY12B , BDY12C , BDY12D , BDY13 , BDY13-10 , BDY13-16 , BDY13-6 , BDY13B , 2N3055 , BDY13D , BDY15 , BDY15A , BDY15B , BDY15C , BDY16 , BDY16A , BDY16B .
Keywords - BDY13C pdf specs
BDY13C cross reference
BDY13C equivalent finder
BDY13C pdf lookup
BDY13C substitution
BDY13C replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
2sb77 | ac128 transistor datasheet | c2878 transistor | 2sc732 | 2sc1451 replacement | 6426 mosfet | b1565 | nce82h140