BDY19 Datasheet and Replacement

   Type Designator: BDY19
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 115 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
      - BJT Cross-Reference Search