BDY24B Datasheet, Equivalent, Cross Reference Search
Type Designator: BDY24B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 87 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
BDY24B Transistor Equivalent Substitute - Cross-Reference Search
BDY24B Datasheet (PDF)
bdy23-bdy24-bdy25-180t2-181t2-182t2.pdf
BDY23, 180 T2BDY24, 181 T2BDY25, 182 T2NPN SILICON TRANSISTORS, DIFFUSED MESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY23, 180T2 60Collector-Emitter VoltageVCEO BDY24, 181T2 90 VBDY25, 182T2 140BDY23, 180T2 60VCBO Collector-Base Voltage BDY24, 181T2 100 VBDY25, 182T2 200BDY23, 180T2VEBO Emitt
bdy23 bdy24 bdy25 180t2 181t2 182t2.pdf
BDY23, 180 T2BDY24, 181 T2BDY25, 182 T2NPN SILICON TRANSISTORS, DIFFUSED MESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY23, 180T2 60VCEO Collector-Emitter Voltage BDY24, 181T2 90 VBDY25, 182T2140BDY23, 180T260VCBO Collector-Base Voltage BDY24, 181T2 100 VBDY25, 182T2 200BDY23, 180T2VEBO Emit
bdy24.pdf
isc Silicon NPN Power Transistor BDY24DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 90V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 0.6V(Max)@ I = 2ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF signal powe amplifier applications.ABSOLUTE MAXIMUM RATI
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N3263
