BDY24B Specs and Replacement
Type Designator: BDY24B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 87 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO3
BDY24B Substitution
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BDY24B datasheet
bdy23-bdy24-bdy25-180t2-181t2-182t2.pdf ![]()
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY23, 180T2 60 Collector-Emitter Voltage VCEO BDY24, 181T2 90 V BDY25, 182T2 140 BDY23, 180T2 60 VCBO Collector-Base Voltage BDY24, 181T2 100 V BDY25, 182T2 200 BDY23, 180T2 VEBO Emitt... See More ⇒
bdy23 bdy24 bdy25 180t2 181t2 182t2.pdf ![]()
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY23, 180T2 60 VCEO Collector-Emitter Voltage BDY24, 181T2 90 V BDY25, 182T2 140 BDY23, 180T2 60 VCBO Collector-Base Voltage BDY24, 181T2 100 V BDY25, 182T2 200 BDY23, 180T2 VEBO Emit... See More ⇒
isc Silicon NPN Power Transistor BDY24 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 90V(Min.) (BR)CEO Collector-Emitter Saturation Voltage- V )= 0.6V(Max)@ I = 2A CE(sat C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATI... See More ⇒
Detailed specifications: BDY22-10 , BDY22-6 , BDY23 , BDY23A , BDY23B , BDY23C , BDY24 , BDY24A , A733 , BDY24C , BDY25 , BDY25A , BDY25B , BDY25C , BDY26 , BDY26A , BDY26B .
Keywords - BDY24B pdf specs
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History: BDY97 | 2SC1270
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