All Transistors. BDY27B Datasheet

 

BDY27B Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDY27B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 87 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3

 BDY27B Transistor Equivalent Substitute - Cross-Reference Search

   

BDY27B Datasheet (PDF)

 9.1. Size:258K  comset
bdy26-bdy27-bdy28-183t2-184t2-185t2.pdf

BDY27B
BDY27B

COMSETSEMICONDUCTORSBDY26, 183 T2BDY27, 184 T2BDY28, 185 T2NPN SILICON TRANSISTORS, DIFFUSEDMESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY26, 183T2 180VCEO Collector-Emitter Voltage BDY27, 184T2 200 VBDY28, 185T2 250BDY26, 183T2 300VCBO Collector-Base Voltage BDY27, 184T2 400 VBDY28, 185T2 50

 9.2. Size:11K  semelab
bdy27cx.pdf

BDY27B

BDY27CXDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 6A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.3. Size:11K  semelab
bdy27as.pdf

BDY27B

BDY27ASDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 6A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.4. Size:211K  inchange semiconductor
bdy27.pdf

BDY27B
BDY27B

isc Silicon NPN Power Transistor BDY27DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 0.6V(Max)@ I = 2ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF signal powe amplifier applications.ABSOLUTE MAXIMUM RAT

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC5632

 

 
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