BDY27B PDF and Equivalents Search

 

BDY27B Specs and Replacement

Type Designator: BDY27B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 87 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

 BDY27B Substitution

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BDY27B datasheet

 9.1. Size:258K  comset

bdy26-bdy27-bdy28-183t2-184t2-185t2.pdf pdf_icon

BDY27B

COMSET SEMICONDUCTORS BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY26, 183T2 180 VCEO Collector-Emitter Voltage BDY27, 184T2 200 V BDY28, 185T2 250 BDY26, 183T2 300 VCBO Collector-Base Voltage BDY27, 184T2 400 V BDY28, 185T2 50... See More ⇒

 9.2. Size:11K  semelab

bdy27cx.pdf pdf_icon

BDY27B

BDY27CX Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 6A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒

 9.3. Size:11K  semelab

bdy27as.pdf pdf_icon

BDY27B

BDY27AS Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 6A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒

 9.4. Size:211K  inchange semiconductor

bdy27.pdf pdf_icon

BDY27B

isc Silicon NPN Power Transistor BDY27 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min.) (BR)CEO Collector-Emitter Saturation Voltage- V )= 0.6V(Max)@ I = 2A CE(sat C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RAT... See More ⇒

Detailed specifications: BDY25B , BDY25C , BDY26 , BDY26A , BDY26B , BDY26C , BDY27 , BDY27A , 8050 , BDY27C , BDY28 , BDY28A , BDY28B , BDY28C , BDY29 , BDY34 , BDY37 .

History: BDX71 | BDX69 | WTD772

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