BDY28C Specs and Replacement
Type Designator: BDY28C
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 87 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 75
Package: TO3
BDY28C Substitution
- BJT ⓘ Cross-Reference Search
BDY28C datasheet
bdy26-bdy27-bdy28-183t2-184t2-185t2.pdf 
COMSET SEMICONDUCTORS BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY26, 183T2 180 VCEO Collector-Emitter Voltage BDY27, 184T2 200 V BDY28, 185T2 250 BDY26, 183T2 300 VCBO Collector-Base Voltage BDY27, 184T2 400 V BDY28, 185T2 50... See More ⇒
isc Silicon NPN Power Transistor BDY28 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 250V(Min.) (BR)CEO Collector-Emitter Saturation Voltage- V )= 0.6V(Max)@ I = 2A CE(sat C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RAT... See More ⇒
Detailed specifications: BDY26C , BDY27 , BDY27A , BDY27B , BDY27C , BDY28 , BDY28A , BDY28B , 2SD2499 , BDY29 , BDY34 , BDY37 , BDY37A , BDY38 , BDY39 , BDY39-4 , BDY39-6 .
History: S9012L | 2SC1264 | BDY80 | 2SC2290A | 2SC1263F | BC485-5 | BDX88
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