BDY37 Datasheet and Replacement
Type Designator: BDY37
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
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BDY37 Datasheet (PDF)
bdy37.pdf

isc Silicon NPN Power Transistor BDY37DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V (Min)(BR)CEOLow Collector-Emitter Saturation VoltageExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positioners, linearamplifiers, switching regulators,so
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BFR50 | KTC2553 | 2SC2714O | DSS2515M | 2N60B | 2SD2149 | 2SB128
Keywords - BDY37 transistor datasheet
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History: BFR50 | KTC2553 | 2SC2714O | DSS2515M | 2N60B | 2SD2149 | 2SB128



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