BDY37 Datasheet and Replacement
Type Designator: BDY37
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BDY37 Substitution
BDY37 Datasheet (PDF)
bdy37.pdf

isc Silicon NPN Power Transistor BDY37DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V (Min)(BR)CEOLow Collector-Emitter Saturation VoltageExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positioners, linearamplifiers, switching regulators,so
Datasheet: BDY27B , BDY27C , BDY28 , BDY28A , BDY28B , BDY28C , BDY29 , BDY34 , D209L , BDY37A , BDY38 , BDY39 , BDY39-4 , BDY39-6 , BDY42 , BDY43 , BDY44 .
Keywords - BDY37 transistor datasheet
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History: MM1613 | BF921



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