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BDY37A Specs and Replacement

Type Designator: BDY37A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 250 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 16 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 0.2 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

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BDY37A datasheet

 9.1. Size:204K  inchange semiconductor

bdy37.pdf pdf_icon

BDY37A

isc Silicon NPN Power Transistor BDY37 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners, linear amplifiers, switching regulators,so... See More ⇒

Detailed specifications: BDY27C , BDY28 , BDY28A , BDY28B , BDY28C , BDY29 , BDY34 , BDY37 , 9014 , BDY38 , BDY39 , BDY39-4 , BDY39-6 , BDY42 , BDY43 , BDY44 , BDY45 .

History: BDY97 | 2SC1270 | BDY24B

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History: BDY97 | 2SC1270 | BDY24B

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