All Transistors. BDY39-6 Datasheet

 

BDY39-6 Datasheet and Replacement


   Type Designator: BDY39-6
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 117 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO3
 

 BDY39-6 Substitution

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BDY39-6 Datasheet (PDF)

 9.1. Size:207K  inchange semiconductor
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BDY39-6

isc Silicon NPN Power Transistor BDY39DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =25-100@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 0.7V(Max)@ I = 4ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power AF output stages and instabilized power supplies.A

Datasheet: BDY28C , BDY29 , BDY34 , BDY37 , BDY37A , BDY38 , BDY39 , BDY39-4 , 2SD313 , BDY42 , BDY43 , BDY44 , BDY45 , BDY46 , BDY47 , BDY48 , BDY48-200 .

Keywords - BDY39-6 transistor datasheet

 BDY39-6 cross reference
 BDY39-6 equivalent finder
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