BDY39-6 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BDY39-6 Specs and Replacement

Type Designator: BDY39-6

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 117 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 0.8 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO3

BDY39-6 Substitution

- BJT ⓘ Cross-Reference Search

BDY39-6 datasheet

9.1. Size:207K inchange semiconductor

bdy39.pdf pdf_icon

isc Silicon NPN Power Transistor BDY39 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =25-100@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 0.7V(Max)@ I = 4A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power AF output stages and in stabilized power supplies. A... See More ⇒

Detailed specifications: BDY28C , BDY29 , BDY34 , BDY37 , BDY37A , BDY38 , BDY39 , BDY39-4 , A1013 , BDY42 , BDY43 , BDY44 , BDY45 , BDY46 , BDY47 , BDY48 , BDY48-200 .