BDY42 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDY42
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 12 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BDY42 Transistor Equivalent Substitute - Cross-Reference Search
BDY42 Datasheet (PDF)
..1. Size:206K inchange semiconductor
bdy42.pdf
bdy42.pdf
isc Silicon NPN Power Transistor BDY42DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 250V(Min.)(BR)CEODC Current Gain-: h =20(Min.)@I = 1AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 5ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVoltage regulatorInve
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
