BDY45 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDY45
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 95 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 12 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BDY45 Transistor Equivalent Substitute - Cross-Reference Search
BDY45 Datasheet (PDF)
..1. Size:207K inchange semiconductor
bdy45.pdf
bdy45.pdf
isc Silicon NPN Power Transistor BDY45DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 250V(Min.)(BR)CEODC Current Gain-: h =20(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 15ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVoltage regulatorInv
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
