BDY45 Datasheet and Replacement
Type Designator: BDY45
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 95 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 12 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BDY45 Substitution
BDY45 Datasheet (PDF)
bdy45.pdf

isc Silicon NPN Power Transistor BDY45DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 250V(Min.)(BR)CEODC Current Gain-: h =20(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 15ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVoltage regulatorInv
Datasheet: BDY37A , BDY38 , BDY39 , BDY39-4 , BDY39-6 , BDY42 , BDY43 , BDY44 , 2SD669A , BDY46 , BDY47 , BDY48 , BDY48-200 , BDY48-300 , BDY48-400 , BDY49 , BDY53 .
History: 2SC648H
Keywords - BDY45 transistor datasheet
BDY45 cross reference
BDY45 equivalent finder
BDY45 lookup
BDY45 substitution
BDY45 replacement
History: 2SC648H



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sb827 | c5200 datasheet | 2n2614 | 2sa777 replacement | 2sc828 transistor | 2sd357 | 110n8f6 mosfet datasheet | 2sc458 datasheet