BDY45 Datasheet and Replacement
Type Designator: BDY45
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 95 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 12 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BDY45 Transistor Equivalent Substitute - Cross-Reference Search
BDY45 Datasheet (PDF)
bdy45.pdf
isc Silicon NPN Power Transistor BDY45 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 250V(Min.) (BR)CEO DC Current Gain- h =20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 15A CE(sat C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Voltage regulator Inv... See More ⇒
Datasheet: BDY37A , BDY38 , BDY39 , BDY39-4 , BDY39-6 , BDY42 , BDY43 , BDY44 , D880 , BDY46 , BDY47 , BDY48 , BDY48-200 , BDY48-300 , BDY48-400 , BDY49 , BDY53 .
History: 2SC1603 | 2SD2323 | KRC109M | CHT847BWGP | CIL461 | 2SC4705 | KRC157F
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History: 2SC1603 | 2SD2323 | KRC109M | CHT847BWGP | CIL461 | 2SC4705 | KRC157F
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