BDY47 Datasheet and Replacement
Type Designator: BDY47
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 95 W
Maximum Collector-Base Voltage |Vcb|: 750 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 12 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BDY47 Substitution
BDY47 Datasheet (PDF)
bdy47.pdf

isc Silicon NPN Power Transistor BDY47DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 350V(Min.)(BR)CEODC Current Gain-: h =20(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 15ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVoltage regulatorInv
Datasheet: BDY39 , BDY39-4 , BDY39-6 , BDY42 , BDY43 , BDY44 , BDY45 , BDY46 , BC556 , BDY48 , BDY48-200 , BDY48-300 , BDY48-400 , BDY49 , BDY53 , BDY54 , BDY55 .
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