BDY47 Datasheet and Replacement
Type Designator: BDY47
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 95 W
Maximum Collector-Base Voltage |Vcb|: 750 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 12 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
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BDY47 Datasheet (PDF)
bdy47.pdf

isc Silicon NPN Power Transistor BDY47DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 350V(Min.)(BR)CEODC Current Gain-: h =20(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 15ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVoltage regulatorInv
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: CPH3215 | 2N3553 | BD818 | 2SB1119R | RN2911 | ZTX788A | CMST5087
Keywords - BDY47 transistor datasheet
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History: CPH3215 | 2N3553 | BD818 | 2SB1119R | RN2911 | ZTX788A | CMST5087



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