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BDY47 Specs and Replacement

Type Designator: BDY47

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 95 W

Maximum Collector-Base Voltage |Vcb|: 750 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 12 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

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BDY47 datasheet

 ..1. Size:207K  inchange semiconductor

bdy47.pdf pdf_icon

BDY47

isc Silicon NPN Power Transistor BDY47 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 350V(Min.) (BR)CEO DC Current Gain- h =20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 15A CE(sat C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Voltage regulator Inv... See More ⇒

Detailed specifications: BDY39 , BDY39-4 , BDY39-6 , BDY42 , BDY43 , BDY44 , BDY45 , BDY46 , D209L , BDY48 , BDY48-200 , BDY48-300 , BDY48-400 , BDY49 , BDY53 , BDY54 , BDY55 .

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