BDY47 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDY47
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 95 W
Maximum Collector-Base Voltage |Vcb|: 750 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 12 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BDY47 Transistor Equivalent Substitute - Cross-Reference Search
BDY47 Datasheet (PDF)
..1. Size:207K inchange semiconductor
bdy47.pdf
bdy47.pdf
isc Silicon NPN Power Transistor BDY47DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 350V(Min.)(BR)CEODC Current Gain-: h =20(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 15ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVoltage regulatorInv
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
