BDY48-200 Specs and Replacement
Type Designator: BDY48-200
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
BDY48-200 Substitution
BDY48-200 datasheet
bdy48.pdf
isc Silicon NPN Power Transistor BDY48 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V (Min) (BR)CEO Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in series regulators, power amplifiers, Inverters , deflection circuits , switching regulators, and ... See More ⇒
Detailed specifications: BDY39-6 , BDY42 , BDY43 , BDY44 , BDY45 , BDY46 , BDY47 , BDY48 , 2222A , BDY48-300 , BDY48-400 , BDY49 , BDY53 , BDY54 , BDY55 , BDY56 , BDY57 .
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BJT: GA1A4M | SBT42 | 2SA200-Y
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