All Transistors. BDY49 Datasheet

 

BDY49 Datasheet and Replacement


   Type Designator: BDY49
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3

 BDY49 Transistor Equivalent Substitute - Cross-Reference Search

   

BDY49 Datasheet (PDF)

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BDY49

isc Silicon NPN Power Transistor BDY49 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Excellent Safe Operating Area High Current Capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current, high speed, high power applications. ABSOLUTE MAXIMUM RATING... See More ⇒

Datasheet: BDY44 , BDY45 , BDY46 , BDY47 , BDY48 , BDY48-200 , BDY48-300 , BDY48-400 , D965 , BDY53 , BDY54 , BDY55 , BDY56 , BDY57 , BDY57A , BDY58 , BDY58R .

History: 2SD1732 | 2SC4208 | 2SD1712 | MMBC1622D8

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