BDY49 Datasheet and Replacement
Type Designator: BDY49
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BDY49 Substitution
BDY49 Datasheet (PDF)
bdy49.pdf

isc Silicon NPN Power Transistor BDY49DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOExcellent Safe Operating AreaHigh Current Capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplications.ABSOLUTE MAXIMUM RATING
Datasheet: BDY44 , BDY45 , BDY46 , BDY47 , BDY48 , BDY48-200 , BDY48-300 , BDY48-400 , NJW0281G , BDY53 , BDY54 , BDY55 , BDY56 , BDY57 , BDY57A , BDY58 , BDY58R .
History: CMKT2207
Keywords - BDY49 transistor datasheet
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History: CMKT2207



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