BDY49 Specs and Replacement
Type Designator: BDY49
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BDY49 Substitution
BDY49 datasheet
bdy49.pdf
isc Silicon NPN Power Transistor BDY49 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Excellent Safe Operating Area High Current Capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current, high speed, high power applications. ABSOLUTE MAXIMUM RATING... See More ⇒
Detailed specifications: BDY44 , BDY45 , BDY46 , BDY47 , BDY48 , BDY48-200 , BDY48-300 , BDY48-400 , D965 , BDY53 , BDY54 , BDY55 , BDY56 , BDY57 , BDY57A , BDY58 , BDY58R .
History: 2N6188
Keywords - BDY49 pdf specs
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History: 2N6188
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